Journal of Materials Science and Engineering with Advanced Technology[1] V. I. Lachin and N. S. Savelov, Electronics, Rostov-on-Don:
Phoenix, 2001.
[2] A. Polishscuk, Modern Electronics, Issue 12 (2004), 8-11.
[3] G. Volovich, Modern Electronics, Issue 2 (2006), 10-17.
[4] A. Kerentsev and V. Lanin, Power Electronics, Issue 1 (200),
34.
[5] A. O. Ageev, A. E. Belyaev, N. S. Boltovets, V. N. Ivanov, R. V.
Konakova, Ya. Ya. Kudryk, P. M. Lytvyn, V. V. Milenin and A. V.
Sachenko, 
Schottky barrier diodes: Specific features of
charge transport in rectifying and nonrectifying contacts,
Semiconductors 43(7) (2009), 865-871.
DOI: https://doi.org/10.1134/S1063782609070070
[6] Jung-Hui Tsai, Shao-Yen Chiu, Wen-Shiung Lour and Der-Feng Guo,
High-performance InGaP/GaAs pnp 
heterojunction bipolar transistor,
Semiconductors 43(7) (2009), 939-942.
DOI: https://doi.org/10.1134/S1063782609070227
[7] O. V. Aleksandrov, A. O. Zakhar'in, N. A. Sobolev, E. I. Shek, M.
M. Makoviichuk and E. O. Parshin, Formation of donor centers upon
annealing of dysprosium-and holmium-implanted silicon, Semiconductors
32(9) (1998), 921-923.
DOI: https://doi.org/10.1134/1.1187515
[8] I. B. Ermolovich, V. V. Milenin, R. A. Red’ko and S. M.
Red’ko, Specific features of recombination processes in CdTe
films produced in different temperature conditions of growth and
subsequent annealing, Semiconductors 43(8) (2009), 980-984.
DOI: https://doi.org/10.1134/S106378260908003X
[9] P. Sinsermsuksakul, K. Hartman, S. B. Kim, J. Heo, L. Sun, H. H.
Park, R. Chakraborty, T. Buonassisi and R. G. Gordon, Enhancing the
efficiency of SnS solar cells via band-offset engineering with a zinc
oxysulfide buffer layer, Applied Physics Letters 102(5) (2013);
Article 053901.
DOI: https://doi.org/10.1063/1.4789855
[10] J. G. Reynolds, C. L. Reynolds Jr., A. Mohanta, J. F. Muth, J. E.
Rowe, H. O. Everitt and D. E. Aspnes, Shallow acceptor complexes in
p-type ZnO, Applied Physics Letters 102(15) (2013); Article 152114.
DOI: https://doi.org/10.1063/1.4802753
[11] N. I. Volokobinskaya, I. N. Komarov, T. V. Matyukhina, V. I.
Reshetnikov, A. A. Rush, I. V. Falina and A. S. Yastrebov, A study of
technological processes in the production of high-power high-voltage
bipolar transistors incorporating an array of inclusions in the
collector region, Semiconductors 35(8) (2001), 974-978.
DOI: https://doi.org/10.1134/1.1393038
[12] E. L. Pankratov and E. A. Bulaeva, Doping of materials during
manufacture p-n-junctions and bipolar transistors:
Analytical approaches to model technological approaches and ways of
optimization of distributions of Dopants, Reviews in Theoretical
Science 1(1) (2013), 58-82.
DOI: https://doi.org/10.1166/rits.2013.1004
[13] S. A. Kukushkin, A. V. Osipov and A. I. Romanychev, Epitaxial
growth of zinc oxide by the method of atomic layer deposition on
SiC/Si substrates, Physics of the Solid State 58(7) (2016),
1448-1452.
DOI: https://doi.org/10.1134/S1063783416070246
[14] E. M. Trukhanov, A. V. Kolesnikov and I. D. Loshkarev, Long-range
stresses generated by misfit dislocations in epitaxial films, Russian
Microelectronics 44(8) (2015), 552-558.
DOI: https://doi.org/10.1134/S1063739715080119
[15] E. L. Pankratov and E. A. Bulaeva, On optimization of regimes of
epitaxy from gas phase: Some analytical approaches to model physical
processes in reactors for epitaxy from gas phase during growth films,
Reviews in Theoretical Science 3(4) (2015), 365-398.
DOI: https://doi.org/10.1166/rits.2015.1041
[16] K. K. Ong, K. L. Pey, P. S. Lee, A. T. S. Wee, X. C. Wang and Y.
F. Chong, Dopant distribution in the recrystallization transient at
the maximum melt depth induced by laser annealing, Applied Physics
Letters 89(17) (2006); Article 172111.
DOI: https://doi.org/10.1063/1.2364834
[17] H. T. Wang, L. S. Tan and E. F. Chor, Pulsed laser annealing of
Be-implanted GaN, Journal of Applied Physics 98(9) (2005); Article
094901.
DOI: https://doi.org/10.1063/1.2120893
[18] Yu. V. Bykov, A. G. Eremeev, N. A. Zharova, I. V. Plotnikov, K.
I. Rybakov, M. N. Drozdov, Yu. N. Drozdov and V. D. Skupov, Diffusion
processes in semiconductor structures during microwave annealing,
Radiophysics and Quantum Electronics 46(9) (2003), 749-755.
DOI: https://doi.org/10.1023/B:RAQE.0000025008.97954.1c
[19] Y. W. Zhang and A. F. Bower, Numerical simulations of island
formation in a coherent strained epitaxial thin film system, Journal
of the Mechanics and Physics of Solids 47(11) (1999), 2273-2297.
DOI: https://doi.org/10.1016/S0022-5096(99)00026-5
[20] L. D. Landau and E. M. Lefshits, Theory of Elasticity, Volume 7,
Theoretical Physics, Physmatlit, Moscow, 2001.
[21] Z. Yu. Gotra, Technology of Microelectronic Devices, Radio and
Communication, Moscow, 1991.
[22] P. M. Fahey, P. B. Griffin and J. D. Plummer, Point defects and
dopant diffusion in silicon, Reviews of Modern Physics 61(2) (1989);
Article 289.
DOI: https://doi.org/10.1103/RevModPhys.61.289
[23] V. L. Vinetskiy and G. A. Kholodar, Radiative Physics of
Semiconductors, Naukova Dumka, Kiev, 1979.
[24] A. G. Roy, K. Mayaram and T. S. Fiez, Analysis and design
optimization of enhanced swing CMOS LC oscillators based on a phasor
based approach, Analog Integrated Circuits and Signal Processing 82(3)
(2015), 691-703.
DOI: https://doi.org/10.1007/s10470-015-0490-6
[25] E. L. Pankratov and E. A. Bulaeva, An approach to manufacture a
heterobipolar transistors in thin film structures: On the method of
optimization, International Journal of Micro-Nano Scale Transport
4(1-2) (2013), 17-32.
DOI: http://dx.doi.org/10.1260/1759-3093.4.1-2.17
[26] Yu. D. Sokolov, Applied Mechanics, 1(1) (1955), 23-35.
[27] E. L. Pankratov, Dopant diffusion dynamics and optimal diffusion
time as influenced by diffusion-coefficient nonuniformity, Russian
Microelectronics 36(1) (2007), 33-39.
DOI: https://doi.org/10.1134/S1063739707010040
[28] E. L. Pankratov and E. A. Bulaeva, On approach to increase
integration rate of double-gate heterotransistors, International
Journal of Nanoscience 16(4) (2017); Article 1650039.
DOI: https://doi.org/10.1142/S0219581X16500393
[29] E. L. Pankratov and E. A. Bulaeva, Decreasing of quantity of
radiation defects in an implanted-junction rectifiers by using
overlayers, International Journal of Micro-Nano Scale Transport 3(3-4)
(2012), 119-130.
DOI: http://dx.doi.org/10.1260/1759-3093.3.3-4.119
[30] E. L. Pankratov, Increasing of the sharpness of p-n
junctions by Laser Pulses, Nano 6(1) (2011), 31-40.
DOI: https://doi.org/10.1142/S1793292011002329
[31] E. L. Pankratov and E. A. Bulaeva, An analytical approach for
analysis and optimization of formation of field-effect
heterotransistors, Multidiscipline Modeling in Materials and
Structures 12(4) (2016), 578-604.
DOI: https://doi.org/10.1108/MMMS-09-2015-0057
[32] E. L. Pankratov and E. A. Bulaeva, On optimization of
manufacturing of transistors in hybrid cascaded multilevel inverter to
increase their density, Journal of Computational and Theoretical
Nanoscience 14(7) (2017), 3548-3555.
DOI: https://doi.org/10.1166/jctn.2017.6786
