Journal of Materials Science and Engineering with Advanced Technology
TYPE HEXAFERRITE DOPED WITH 
Author's: M. EL-SAADAWY
Pages: [135] - [151]
Received Date: February 25, 2012
Submitted by:
Series of polycrystalline samples of 
were prepared by usual ceramic methods,
where x = 0.0, 0.4, 0.6, 0.8, 1.0, 1.2, 1.4, and 1.6. X-ray
analysis were obtained at room temperature by using 
with confirms the presence of W-type
hexaferrite phase structure. The dc electrical conductivity 
and the dielectric constant 
were studied. The experimental results
showed that dc resistivity, dielectric constant, Curie temperature,
and activation energies for electrical conduction increase as Cu ion
substitution increases. The dc electrical conductivity increases as
temperature increases. The oxygen diffusion in the samples at
annealing temperature of 
for 1 min, was studied. The diffusion
coefficient was calculated by using the equation 
It was found that the oxygen diffusion is
characterized by a relatively small activation energy (0.215eV) and
low pre-exponential factors 
The substitution of Cu ions decreases the
diffusion coefficient up to x = 1.2 and then increase it.
X-ray analysis, electrical properties, charge carrier concentration,
diffusion coefficient, 
hexagonal ferrite.
