Journal of Materials Science and Engineering with Advanced TechnologyAuthor's: Yanmin Wang and Barry Chambers
Pages: [109] - [119]
Received Date: December 3, 2009; Revised March 7, 2010
Submitted by: Supon Ananta
Three kinds of Schottky diodes based on poly(3,4-ethylenedioxythiophene) nanocomposite were successfully made, respectively, with the metal electrodes such as Al, Zr, and In. Cyclic voltammetry measurement was carried on them. The influence of the work functions of the electrodes, the scan rates etc. on the rectification behavior were thoroughly studied and explained. When the scan rate is too fast above 25mV/s for the nanocomposite with Al electrodes, no electrochemical reaction takes place in the conducting polymer nanocomposite during such a short scan period, and the nanocomposite is not switched on. By comparison with the results of different metals (Al, Zr, In) as the electrode of the Schottky barriers at the same voltage and scan rate, the Schottky diode with Zr plate generally has better rectification behavior. Especially, at the Zr electrode, the best rectification performance occurs with the rectification ratio of 1371 at ±2V and the scan rate of 2mV/s, which is pretty high for the conducting polymer/metal Schottky diode. Moreover, when the region of the applied voltage increases, the rectification ratio for Schottky diode at Al electrode increases, but that for Schottky diode at Zr electrode decreases when the voltage range is above ±2V.
Schottky diode, poly(3,4-ethylenedioxythiophene), nanocomposite, rectification.
