Volume no :21, Issue no: 1, January (2020)

Journal of Materials Science and Engineering with Advanced Technology

ON OPTIMIZATION OF MANUFACTURING OF A SENSE-AMPLIFIER BASED FLIP-FLOP MANUFACTURED IN A HETEROSTRUCTURES TO INCREASE DENSITY OF THEIR ELEMENTS. INFLUENCE OF MISMATCH INDUCED STRESS AND POROSITY OF MATERIALS ON TECHNOLOGICAL PROCESS

Author's: E. L. Pankratov
Pages: [1] - [26]
Received Date: October 12, 2019; Revised December 5, 2019
Submitted by:
DOI: http://dx.doi.org/10.18642/jmseat_7100122104

Abstract

The paper describes an approach for increasing of density of field-effect heterotransistors in a sense-amplifier based flip-flop. To illustrate the approach we consider manufacturing of an amplifier of power in a heterostructure with specific configuration. One shall dope some specific areas of the heterostructure by diffusion or ion implantation. After that radiation defects and/or dopant should be annealed framework optimized procedure. We introduce an approach for decreasing of stress between layers of heterostructure. Also it has been considered an analytical approach for prognosis of heat and mass transport in heterostructures, which can be take into account mismatch-induced stress.

Keywords

broadband power amplifier, optimization of manufacturing, increasing of element integration rate.