References

POINT DEFECTS IN AMORPHOUS AND NANOCRYSTALLINE FLUORINATED SILICON FILMS


[1] J. W. Corbett, G. D. Watkins, R. M. Chrenko and R. S. McDonald, Phys. Rev. 121 (1961), 1015.

[2] B. Jones, B. J. Coomer, J. P. Goss, B. Hourahine and A. Recende, In special defects in semiconductor materials edited by R. P. Agarwal.

[3] Y. Kim, M. Hwang, H. Kim, J. Kim and Y. Lee, J. Appl. Phys. 90 (2001), 3367.

[4] M. Lanoo and G. Alan, Solid State Comm. 28 (1978), 733.

[5] M. E. Law, Y. M. Haddara and K. S. Jones, J. Appl. Phys. 84 (1998), 3555.

[6] D. Milovzorov, Electrochemical and Solid State Letters 4(7) (2001), 61-63.

[7] D. Milovzorov, Quantum logical elements for computing based on polycrystalline silicon, Proceedings of SPIE Photonics and Nanostructures 5361 (2004), 108-116.

[8] D. Milovzorov, Memory cell with photoacoustic switching, Proceedings of SPIE 5592 (2005), 427-437.

[9] D. Milovzorov, Field-effect on crystal phase of silicon in structure, Journal of Nanomaterials, Volume 2008, Article ID 712985, 4 pages, 2008.

[10] L. Pan, Y. Ee, C. Sun, G. Yu, Q. Zhang and B. Tay, J. Vac. Sci. Technol. B 22(2) (2004), 583.

[11] Z. Smith and S. Wagner, Phys. Rev. Lett. 59 (1987), 688.

[12] D. Staebler and C. Wronski, J. Appl. Phys. 51 (1980), 3262.

[13] K. Tanaka, E. Maruyama, T. Shimada, H. Okamoto and T. Sato, Amorphous Silicon p.79, John Wiley & Sons, Chichester, 1999.

[14] M. Voronkov, Top. Current. Chem. 131 (1986), 99.

[15] G. D. Watkins and J. W. Corbett, Phys. Rev. 121 (1961), 1001.

[16] G. D. Watkins and J. W. Corbett, Phys. Rev. A138, (1965), 543.

[17] C. Xu, T. Taylor, G. Burton and D. Neumark, J. Chem. Phys. 108 (1998), 7645.