Journal of Materials Science and Engineering with Advanced Technology[1] I. P. Stepanenko, Basis of Microelectronics, Soviet Radio, Moscow,
1980.
[2] V. G. Gusev and Yu. M. Gusev, Electronics, Higher School, Moscow,
1991.
[3] V. I. Lachin and N. S. Savelov, Electronics, Rostov-on-Don,
Phoenix, 2001.
[4] A. A. Vorob’ev, V. V. Korablev and S. Yu. Karpov, The use of
magnesium to dope gallium nitride obtained by molecular-beam epitaxy
from activated nitrogen, Semiconductors 37(7) (2003), 838-842.
DOI: https://doi.org/10.1134/1.1592861
[5] L. M. Sorokin, N. V. Veselov, M. P. Shcheglov, A. E. Kalmykov, A.
A. Sitnikova, N. A. Feoktistov, A. V. Osipov and S. A. Kukushkin,
Electron-microscopic investigation of a SiC/Si(111) structure obtained
by solid phase epitaxy, Technical Physics Letters 34(11) (2008),
992-994.
DOI: https://doi.org/10.1134/S1063785008110278
[6] V. V. Lundin, A. V. Sakharov, E. E. Zavarin, M. A. Sinitsyn, A. E.
Nikolaev, G. A. Mikhailovsky, P. N. Brunkov, V. V. Goncharov, B. Ya.
Ber, D. Yu. Kazantsev and A. F. Tsatsulnikov, Effect of carrier gas
and doping profile on the surface morphology of MOVPE grown heavily
doped GaN:Mg layers, Semiconductors 43(7) (2009), 963-967.
DOI: https://doi.org/10.1134/S1063782609070276
[7] Y. E. Bravo-García, P. Rodríguez-Fragoso, J. G. Mendoza-Alvarez
and G. Gonzalez de la Cruz, Growth and characterization of InAsSb
layers on GaSb substrates by liquid phase epitaxy, Materials Science
in Semiconductor Processing 40 (2015), 253-256.
DOI: https://doi.org/10.1016/j.mssp.2015.06.062
[8] Y. Li, L. E. Antonuk, Y. El-Mohri, Q. Zhao, H. Du, A. Sawant and
Yi Wang, Effects of x-ray irradiation on polycrystalline silicon,
thin-film transistors, Journal of Applied Physics 99(6) (2006);
Article 064501.
DOI: https://doi.org/10.1063/1.2179149
[9] A. Chakraborty, H. Xing, M. D. Craven, S. Keller, T. Mates, J. S.
Speck, S. P. Den Baars and U. K. Mishra, Nonpolar a-plane
p-type GaN and p-n Junction Diodes, Journal of
Applied Physics 96(8) (2004); Article 4494.
DOI: https://doi.org/10.1063/1.1790065
[10] H. Taguchi, S. Miyake, A. Suzuki, S. Kamiyama and Y. Fujiwara,
Evaluation of crystallinity of GaN epitaxial layer after wafer dicing,
Materials Science in Semiconductor Processing 41 (2016), 89-91.
DOI: https://doi.org/10.1016/j.mssp.2015.07.083
[11] M. Mitsuhara, M. Ogasawara and H. Sugiura, Beryllium doping of
InP during metalorganic molecular beam epitaxy using
bismethylcyclopentadienyl-beryllium, Journal of Crystal Growth
183(1-2) (1998), 38-42.
DOI: https://doi.org/10.1016/S0022-0248(97)00336-9
[12] R. A. Talalaev, E. V. Yakovlev, S. Yu. Karpov and Yu. N. Makarov,
On low temperature kinetic effects in metal-organic vapor phase
epitaxy of III-V compounds, Journal of Crystal Growth 230(1-2) (2001),
232-238.
DOI: https://doi.org/10.1016/S0022-0248(01)01354-9
[13] H. S. Carslaw and J. C. Jaeger, Conduction of Heat in Solids,
Clarendon Press, Oxford, 1964.
[14] Yu. D. Sokolov, About the definition of dynamic forces in the
mine lifting, Applied Mechanics 1(1) (1955), 23-35.
[15] E. L. Pankratov and E. A. Bulaeva, On prognosis of epitaxy from
gas phase process to improve properties of epitaxial layers, 3D
Research 6(4) (2015); Article 40.
DOI: https://doi.org/10.1007/s13319-015-0073-4
[16] E. L. Pankratov and E. A. Bulaeva, On optimization of regimes of
epitaxy from gas phase: Some analytical approaches to model physical
processes in reactors for epitaxy from gas phase during growth films,
Reviews in Theoretical Science 3(4) (2015), 365-398.
DOI: https://doi.org/10.1166/rits.2015.1041
[17] E. L. Pankratov and E. A. Bulaeva, On optimization of growth from
gas phase in a vertical reactor with account native convection to
improve properties of films, Multidiscipline Modeling in Materials and
Structures 12(4) (2016), 712-725.
DOI: https://doi.org/10.1108/MMMS-02-2016-0008
[18] E. L. Pankratov and E. A. Bulaeva, On development of analytical
approaches to prognosis of epitaxial grows from gas phase to improve
properties of films, Journal of Computational and Theoretical
Nanoscience 14(7) (2017), 3556-3563.
DOI: https://doi.org/10.1166/jctn.2017.6787
[19] E. L. Pankratov and E. A. Bulaeva, Modelling mass and heat
transport during gas phase epitaxy in a reactor with rotating
substrate: On possibility to improve of properties of films,
International Journal of Thin Films Science and Technology 6(2)
(2017), 53-59.
DOI: https://doi.org/10.18576/ijtfst/060201
[20] G. A. Korn and T. M. Korn, Mathematical Handbook for Scientists
and Engineers: Definitions, Theorems, and Formulas for Reference and
Review, Second Edition, McGraw-Hill Book Company, New York, 1968.
[21] V. G. Levich, Physicochemical hydrodynamics, М. Наука,
1962.
