[1] Ü. Özgür, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S.
Doğan, V. Avrutin, S.-J. Cho and H. Morkoç, A comprehensive review
of ZnO materials and devices, Journal of Applied Physics 98(4) (2005);
Article 041301.
DOI: https://doi.org/10.1063/1.1992666
[2] B. K. Meyer, H. Alves, D. M. Hofmann, W. Kriegseis, D. Forster, F.
Bertram, J. Christen, A. Hoffmann, M. Straßburg, M. Dworzak, U.
Haboeck and A. V. Rodina, Bound exciton and donor-acceptor pair
recombinations in ZnO, Physica Status Solidi (b) 241(2) (2004),
231-260.
DOI: https://doi.org/10.1002/pssb.200301962
[3] K. Yasui, N. Yamaguchi, E. Nagatomi, S. Satomoto and T. Kato,
Electrical properties of zinc oxide thin films deposited using
high-energy generated from a catalytic reaction on platinum
nanoparticles, MRS Symp. Pro. 1494 (2013), 127-132.
DOI: https://doi.org/10.1557/opl.2013.240
[4] A. Tsukazaki, M. Kubota, A. Ohtomo, T. Onuma, K. Ohtani, H. Ohno,
S. F. Chichibu and M. Kawasaki, Blue light-emitting diode based on
ZnO, Japanese Journal of Applied Physics, Part 2 44(20-23) (2005),
L643-L645.
DOI: https://doi.org/10.1143/JJAP.44.L643
[5] S. Y. Myong, S. J. Baik, C. H. Lee, W. Y. Cho, and K. S. Lim,
Extremely transparent and conductive ZnO:Al thin films prepared by
photo-assisted metalorganic chemical vapor deposition (photo-MOCVD)
using as new doping material, Japanese Journal of
Applied Physics, Part 2 36(8B) (1997), L1078-L1081.
DOI: https://doi.org/10.1143/JJAP.36.L1078
[6] B. M. Ataev, A. M. Bagamadova, A. M. Djabrailov, V. V. Mamedov and
R. A. Rabadanov, Highly conductive and transparent Ga-doped epitaxial
ZnO films on sapphire by CVD, Thin Solid Films 260(1) (1995),
19-20.
DOI: https://doi.org/10.1016/0040-6090(94)09485-3
[7] V. Assuncao, E. Fortunato, A. Marques, H. Aguas, I. Ferreira, M.
E. V. Costa and R. Martins, Influence of the deposition pressure on
the properties of transparent and conductive ZnO:Ga thin-film produced
by r.f. sputtering at room temperature, Thin Solid Films 427(1-2)
(2003), 401-405.
DOI: https://doi.org/10.1016/S0040-6090(02)01184-7
[8] Z. F. Liu, F. K. Shan, Y. X. Li, B. C. Shin and Y. S. Yu,
Epitaxial growth and properties of Ga-doped ZnO films grown by pulsed
laser deposition, Journal of Crystal Growth 259(1-2) (2003),
130-136.
DOI: https://doi.org/10.1016/j.jcrysgro.2003.07.007
[9] H. J. Ko, Y. F. Chen, S. K. Hong, H. Wenisch, T. Yao and D. C.
Look, Ga-doped ZnO films grown on GaN templates by plasma-assisted
molecular-beam epitaxy, Applied Physics Letters 77(23) (2000),
3761-3763.
DOI: https://doi.org/10.1063/1.1331089
[10] T. Minami, H. Nanto and S. Takata, Highly conductive and
transparent aluminum doped zinc oxide thin films prepared by RF
magnetron sputtering, Japanese Journal of Applied Physics 23 Part 2(5)
(1984), L280-L282.
DOI: https://doi.org/10.1143/JJAP.23.L280
[11] X.-L. Guo, H. Tabata and T. Kawai, Epitaxial growth and
optoelectronic properties of nitrogen-doped ZnO films on substrate, Journal of Crystal Growth 237(239)
(2002), 544-547.
DOI: https://doi.org/10.1016/S0022-0248(01)01974-1
[12] Y. Yan, S. B. Zhang and S. T. Pantelides, Control of doping by
impurity chemical potentials: Predictions for p-type ZnO,
Physical Review Letters 86(25) (2001), 5723-5726.
DOI: https://doi.org/10.1103/PhysRevLett.86.5723
[13] X. Li, Y. Yan, T. A. Gessert, C. DeHart, C. L. Perkins, D. Young
and T. J. Coutts, p-Type ZnO thin films formed by CVD reaction
of diethylzinc and NO gas, Electrochemical Solid-State Letters 6(4)
(2003), C56-C58.
DOI: https://doi.org/10.1149/1.1554292
[14] X. Li, Y. Yan, T. A. Gessert, C. L. Perkins, D. Young, C. DeHart,
M. Young and T. J. Coutts, Chemical vapor deposition-formed
p-type ZnO thin films, Journal of Vacuum Science & Technology A
21(4) (2003), 1342-1346.
DOI: https://doi.org/10.1116/1.1584036
[15] K. Yasui, M. Morioka, S. Kanauchi, Y. Ohashi, T. Kato and Y.
Tamayama, Effects of gas addition on the properties of ZnO films
grown by catalytic reaction-assisted chemical vapor deposition,
Journal of Vacuum Science & Technology A 33(6) (2015); Article 061519.
DOI: https://doi.org/10.1116/1.4935334
[16] H. Umemoto, H. Kusanagi, K. Nishimura and M. Ushijima, Detection
of radical species produced by catalytic decomposition of and their mixtures on heated Ir surfaces, Thin
Solid Films 517(12) (2009), 3446-3448.
DOI: https://doi.org/10.1016/j.tsf.2009.01.020
[17] M. Petravic, P. N. K. Deenapanray, V. A. Coleman, C. Jagadish
K.-J. Kim, B. Kim, K. Koike, S. Sasa, M. Inoue and M. Yano, Chemical
states of nitrogen in ZnO studied by near-edge X-ray absorption fine
structure and core-level photoemission spectroscopies, Surface Science
600(7) (2006), L81-L85.
DOI: https://doi.org/10.1016/j.susc.2006.01.015
[18] E.-C. Lee, Y.-S. Kim, Y.-G. Jin and K. J. Chang, Compensation
mechanism for N acceptors in ZnO, Physical Review B 64(8) (2001);
Article 085120.
DOI: https://doi.org/10.1103/PhysRevB.64.085120