Journal of Materials Science and Engineering with Advanced Technology[1] D. M. Bagnall, Y. F. Chen, Z. Zhu, T. Yao, S. Koyama, M. Y. Shen
and T. Goto, Optically pumped lasing of ZnO at room temperature, Appl.
Phys. Lett. 70 (1997), 2230-2233.
[2] L. J. Brillson and Y. Lu, ZnO Schottky barriers and ohmic
contacts, J. Appl. Phys. 109 (2011), 121301.
[3] L. J. Brillson and Y. C. Lu, ZnO Schottky barriers and ohmic
contacts, J. Appl. Phys. 109 (2011), 121301-121334.
[4] L. S. Chuah, Z. Hassan and H. Abu Hassan, Preferential orientation
growth of AlN thin films on Si(111) substrates by plasma-assisted
molecular beam epitaxy, Surface Review and Letters 16(6) (2009),
925-928.
[5] L. S. Chuah, Z. Hassan and S. G. Teo, Effect of thermal annealing
on the Ir/Ag contact to p-GaN, Journal of Non-Crystalline Solids 356
(2010), 1863-1866.
[6] M. A. Haase, J. Qui, J. M. De Puydt and H. Cheng, Appl. Phys.
Lett. 59 (1991), 1272.
[7] Z. Hassan, Y. C. Lee, F. K. Yam, Z. J. Yap, N. Zainal, H. Abu
Hassan and K. Ibrahim, Phys. Stat. Sol (c) 1 (2004), 2528-2532.
[8] Z. Hassan, F. K. Yam, Z. J. Yap, A. Abdul Aziz and K. Ibrahim,
Materials Science Forum 480 (2005), 525-530.
[9] K. Ip, Y. W. Heo, K. H. Baik, D. P. Norton, S. J. Pearton and F.
Ren, Appl. Phys. Lett. 84 (2004), 544.
[10] K. Ip, Y. W. Heo, K. H. Baik, D. P. Norton, S. J. Pearton and F.
Ren, Appl. Phys. Lett. 84 (2004), 544-546.
[11] K. Ip, Y. W. Heo, D. P. Norton, S. J. Pearton, J. R. LaRoche and
F. Ren, Appl. Phys. Lett. 85 (2004), 1169.
[12] K. Ip, G. T. Thaler, H. Yang, S. Y. Han, Y. Li, D. P. Norton, S.
J. Pearton, S. Jang and F. Ren, J. Cryst. Growth 287 (2006), 149.
[13] S. C. Jain, M. Willander, J. Narayan and R. Van Overstraeten, J.
Appl. Phys. 87 (2000), 965.
[14] H. Kim, S. Han, T. Seong and W. Choi, J. Electrochem. Soc. 148
(2001), G114.
[15] H.-K. Kim, S.-H. Han, W. K. Choi and T.-Y. Seong, Appl. Phys.
Lett. 77 (2000), 1647.
[16] H.-K. Kim, T.-Y. Seong, K.-K. Kim, S.-J. Park, Y. S. Yoon and I.
Adesida, Jpn. J. Appl. Phys., Part 1 43 (2004), 976.
[17] H.-K. Kim, J. W. Bae, K. K. Kim, S. J. Park, T. Y. Seong and I.
Adesida, Thin Solid Films 447/448 (2004), 90-94.
[18] H.-K. Kim and J. M. Lee, Superlat. Microstruct. 42 (2007),
255-258.
[19] J. H. Kim, J. Y. Moon, H. S. Lee, W. S. Han, H. K. Cho, J. Y. Lee
and H. S. Kim, Mat. Sci. Eng. B 165 (2008), 77.
[20] J. H. Kim, J. Y. Moon, H. S. Lee, W. S. Han, H. K. Cho, J. Y. Lee
and H. S. Kim, Al/Au Ohmic contact to n-ZnO by dc sputtering,
Materials Science and Engineering: B 165 (2009), 77-79.
[21] S. Kim, H. Jang, J. Kim, C. Jeon, W. Park, G. Yi and J. Lee, J.
Electron. Mater. 31 (2002), 868.
[22] S. Kim, S. Jeong, D. Hwang, S. Park and T. Seong, Zn/Au Ohmic
contacts on n-type ZnO layers for light-emitting devices,
Electrochemical and Solid-State Letters 8 (2005), G198-G200.
[23] S.-H. Kim, K.-K. Kim, S.-J. Park and T.-Y. Seong, J. Electrochem.
Soc. 152 (2005), G169.
[24] S. Y. Kim, H. W. Jang, J. K. Kim, C. M. Jeon, W. I. Park, G. C.
Yi and J. L. Lee, Low-resistance Ti/Al ohmic contact on undoped ZnO,
Journal of Electronic Materials 31 (2002), 868-871.
[25] O. Kordina, J. P. Bergman, A. Henry, E. Janzen, S. Savage, J.
Andre, L. P. Ramberg, U. Lindefelt, W. Hermansson and K. Bergman,
Appl. Phys. Lett. 67 (1995), 1561.
[26] J. Lee, K. Kim, S. Park and W. Choi, Appl. Phys. Lett. 78 (2001),
3842.
[27] Y. F. Lu, Z. Z. Ye, Y. J. Zheng, L. P. Zhu and B. H. Zhao,
Electrochem. Solid-State Lett. 11 (2008), H185.
[28] S. J. Pearton, D. P. Norton, K. Ip, Y. W. Heo and T. Steiner,
Prog. Mater. Sci. 50 (2005), 293.
[29] G. K. Reeves and H. B. Harrison, Elektron Device Letters 3
(1982), 111-113.
[30] S. Ruvimov, Z. Kiliental-Weber, J. Washburn, K. J. Duxstad, E. E.
Haller, Z.-F. Fan, S. N. Mohammad, W. Kim, A. E. Botchkarev and H.
Morkoc, Appl. Phys. Lett. 69 (1996), 1556.
[31] J. Salfi, U. Philipose, C. F. de Sousa, S. Aouba and H. E. Ruda,
Appl. Phys. Lett. 89 (2006), 261112.
[32] H. Sheng, N. W. Emanetoglu, S. Muthukumar, S. Feng and Y. Lu, J.
Electron. Mater. 31 (2002), 811-814.
[33] H. Sheng, S. Muthukumar, N. Emanetoglu, B. Yakshinskiy, S. Feng
and Y. Lu, J. Electron. Mater. 32 (2003), 935.
[34] H. S. Yang, D. P. Norton, S. J. Pearton and F. Ren, Appl. Phys.
Lett. 87 (2005), 212106.
[35] H. Zhu, C. X. Shan, B. Yao, B. H. Li, J. Y. Zhang, Z. Z. Zhang,
D. X. Zhao, D. Z. Shen, X. W. Fan, Y. M. Lu and Z. K. Tang,
Ultralow-threshold laser realized in zinc oxide, Advanced Materials 21
(2009), 1613-1617.
[36] F. Zhuge, L. P. Zhu, Z. Z. Ye, D. W. Ma, J. G. Lu, J. Y. Huang,
F. Z. Wang, Z. G. Ji and S. B. Zhang, Appl. Phys. Lett. 87 (2005),
092103.
