Journal of Materials Science and Engineering with Advanced TechnologyAuthor's: Marco Roberto Cavallari, Cleber Alexandre de Amorim, Gerson dos Santos, Sergio Mergulhão, Fernando Josepetti Fonseca and Adnei Melges de Andrade
Pages: [33] - [56]
Received Date: July 26, 2011
Submitted by:
A methodology of material selection for polymer thin-film transistors (PTFT) is important for further improvements in performance and classifying materials for electronics. Charge carrier mobility is believed to be the most important device parameter and was investigated through techniques as time-of-flight (ToF), charge extraction in a linearly increasing voltage (CELIV), current vs. voltage (JxV) and transistor curves. A discussion of the pros and cons of common structures (e.g., planar and vertical) and techniques (e.g., transient and steady-state current measurements) is presented for a well-known semiconductor: poly[2-methoxy- -(3’,7’-dimethyloctyloxy)-1,4-phenylenevinylene] (MDMO-PPV). We demonstrate that the best solution is to have a benchmark bottom gate planar structure and standard characterization conditions (e.g., temperature, light, and humidity) with the proper choice of dielectric and electrodes. Nevertheless, if a rough estimative of the mobility is required, vertical-structured samples for CELIV yields low-cost and fast results.
PTFT, hole mobility, material selection methodology, MDMO-PPV.
