Journal of Materials Science and Engineering with Advanced TechnologyAuthor's: D. Milovzorov
Pages: [41] - [59]
Received Date: April 30, 2010
Submitted by:
Nanocrystalline fluorinated silicon films are studied by using Raman spectroscopy, electron paramagnetic resonance, Fourier-transformed infrared spectroscopy, atomic force microscopy, nonlinear laser spectroscopy, and photoluminescence. Electrical properties of nanocrystalline silicon and amorphous silicon films were compared. The field-assisted migration of point defects is dramatic for durability and reproducibility properties of devices based on amorphous silicon. The conductivity properties are stable for nanocrystalline silicon film by electric field.
nanocrystalline silicon, fluorinated silicon films, point defects, silicon bonds, paramagnetic centers, current-voltage and resistance-voltage characteristics, Raman spectral characteristics.
