Author's: E. L. Pankratov
Pages: [111] - [163]
Received Date: January 15, 2021
Submitted by:
DOI: http://dx.doi.org/10.18642/jmseat_7100122165
In this paper, we introduce an approach to increase density of field-effect transistors framework a injection-locked frequency divider. Framework the approach we consider manufacturing the inverter in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.
injection-locked frequency divider, optimization of manufacturing, analytical approach for modelling.