Volume no :23, Issue no: 1, January (2021)

Journal of Materials Science and Engineering with Advanced Technology

ON MODEL OF MANUFACTURING OF AN INTEGRATED CIRCUITS BASED ON HETERO-STRUCTURES UNDER INFLUENCE OF MISMATCH-INDUCED STRESS AND POROSITY OF MATERIALS

Author's: E. L. Pankratov
Pages: [1] - [53]
Received Date: Received July 30, 2020
Submitted by:
DOI: http://dx.doi.org/10.18642/jmseat_7100122147

Abstract

In this paper, we introduce an approach to increase density of field-effect transistors framework a downconversion mixer circuit. Framework the approach we consider manufacturing the mixer in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should be annealed by framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.

Keywords

downconversion mixer circuit, optimization of manufacturing, increasing of element integration rate.