Volume no :22, Issue no: 1, July (2020)

Journal of Materials Science and Engineering with Advanced Technology

ON PROGNOSIS OF MANUFACTURING OF AN ENHANCED SWING DIFFERENTIAL COLPITTS OSCILLATOR BASED ON HETEROSTRUCTURES TO INCREASE DENSITY OF THEIR ELEMENTS: INFLUENCE OF MISMATCH-INDUCED STRESS

Author's: E. L. Pankratov
Pages: [23] - [69]
Received Date: July 30, 2020
Submitted by:
DOI: http://dx.doi.org/10.18642/jmseat_7100122146

Abstract

In this paper, we introduce an approach to increase density of field-effect transistors framework an enhanced swing differential Colpitts oscillator. Framework the approach we consider manufacturing the oscillator in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.

Keywords

enhanced swing differential Colpitts oscillator, optimization of manufacturing, increasing of density of elements.