Journal of Materials Science and Engineering with Advanced TechnologyAuthor's: E. L. Pankratov
Pages: [1] - [14]
Received Date: June 12, 2019
Submitted by:
DOI: http://dx.doi.org/10.18642/jmseat_7100122073
In this paper, we introduce a model for the redistribution and interaction of point radiation defects between themselves, as well as their simplest complexes in a material, taking into account the experimentally non-monotonicity of the distribution of the concentration of radiation defects. To take into account this non-monotonicity, the previously used model in the literature for the analysis of spatio-temporal distributions of the concentration of radiation defects was supplemented by the concentration dependence of their diffusion coefficient.
ion implantation, model of radiation defects, analytical approach for modelling.
