Journal of Materials Science and Engineering with Advanced TechnologyAuthor's: E. L. Pankratov
Pages: [79] - [97]
Received Date: April 30, 2019
Submitted by:
DOI: http://dx.doi.org/10.18642/jmseat_7100122054
In this paper, we estimate the rate of growth of epitaxial layers from the gas phase. We study dependence of the rate on the value of the heating of the substrate. By using the previously introduced approach of mass and heat transfer analysis, analytical dependencies of the considered rate on the parameters were obtained. In this paper, based on recently introduced approach, we analyzed mass and heat transport during growth of epitaxial layers in reactors for epitaxy from gas phase with sloping keeper with account native convection. Based on recently introduced approach, we estimate rate of growth of films and analyzed dependences of the rate on physical and technological parameters.
growth from gas phase, changing of growth rate, prognosis of technological process.
