Journal of Materials Science and Engineering with Advanced TechnologyAuthor's: Phuong Viet Pham
Pages: [91] - [106]
Received Date: March 23, 2018; Revised May 1, 2018
Submitted by:
DOI: http://dx.doi.org/10.18642/jmseat_7100121943
Graphene has achieved an amazing interest from the science community through the world in term of multidisciplinary fields of nanotechnology owing to its outstanding mechanical, thermal, and physical characteristics. The plasma-related etching of chemical vapor deposition (CVD) grown-graphene and graphene oxide (GO) utilizing different methods related to chemistry, physics, nanotechnology, and engineering are emerging as the “hot issue” for achieving the thinner graphene layer and cleaner surface in order to improve their electronics and optoelectronics in high performance device fabrication. The resided impurities and the high roughness surface due to the nature of graphene materials induced the deteriorating in its performance. Removing the impurities by surface cleaning or plasma-related graphene etching regarding layer-by-layer thinning method as the top-down lithography. In particular, the plasma-related graphene etching which is no inducing any damage for graphene lattice while maintaining the of its, which affects conductivity will be attracting study and highly demand. This mini review will briefly address the recent advances of etching technology based on emerging plasma strategies. From here, it could be used to apply similarly for the etching on other nanomaterials.
plasma-related graphene, ion beam, neutral beam, etching.
