Journal of Materials Science and Engineering with Advanced TechnologyAuthor's: Z. Zaaboub, F. Hassen, M. Naffouti and H. Maaref
Pages: [1] - [17]
Received Date: May 4, 2016
Submitted by:
DOI: http://dx.doi.org/10.18642/jmseat_7100121665
We report an investigation of carrier dynamics in multi-layer of p-doped InAs quantum dots (QDs) structure grown by molecular beam epitaxy on GaAs (001) substrate. We have studied the temperature effect, the density of excitation, and the detection’s wavelength effects on the decay time of the photo-generated carrier. The decay time, the full width at half maximum, and the integrated photoluminescence intensity behaviours show three domains of temperature dependence. These domains are related to the carrier transfer processes between distributions of QDs of the same layer. It is shown that, at low temperature, the transfer is mainly ensured by tunneling, where the recombination process is found to be pure radiative. At the intermediate temperature, there is a competition between radiative and non-radiative recombination processes. And for high temperature, the transfer is assisted by the thermal activation and recombination is purely non-radiative.
InAs QDs, decay time, tunneling effects, recombination process, carrier transfer.
