Volume no :12, Issue no: 1, March (2020)

International Journal of Applied Mathematics and Machine Learning

AN ANALYTICAL MODEL FOR PROGNOSIS OF MASS TRANSPORT DURING MANUFACTURING OF A BIT-CELL WITHOUT READ-PORT TRANSISTORS TO INCREASE INTEGRATION RATE OF ELEMENTS OF THE CIRCUIT

Author's: E. L. Pankratov
Pages: [13] - [58]
Received Date: November 8, 2019
Submitted by: Professor Li Li
DOI: http://dx.doi.org/10.18642/ijamml_7100122112

Abstract

In this paper, we introduce an analytical approach for prognosis of mass transport during manufacturing of a bit-cell circuit without read-port transistors. Based on this approach we obtain conditions to increase density of elements of this circuit, manufactured by diffusion or ion implantation with optimized annealing time of dopant and/or radiation defects. The above analytical approach gives a possibility to take into account nonlinearity of the mass transport, dependences of parameters of the transport on spatial coordinate and time.

Keywords

partial differential equation, analytical approach for solution, taking into account nonlinearity of the mass transport, dependences of parameters of the transport on spatial coordinate and time, prognosis of mass transport, manufacturing of a bit-cell circuit, increasing of density of elements of this circuit.